类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 晶体管元件材料 | 制造商包装标识符 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大结点温度(Tj) | 场效应管特性 | 栅源电压 | 反馈上限-最大值 (Crss) | 最小击穿电压 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | STL15DN4F5 | STMicroelectronics | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 14 Weeks | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 5 | SILICON | 2 | 32 ns | -55°C~175°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101, STripFET™ V | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | 9MOhm | Matte Tin (Sn) | ULTRA LOW-ON RESISTANCE | 60W | FLAT | 260 | STL15 | 8 | R-PDSO-F6 | Dual | 增强型MOSFET | 60W | DRAIN | 18 ns | 2 N-Channel (Dual) | SWITCHING | 9m Ω @ 7.5A, 10V | 4V @ 250μA | 1550pF @ 25V | 25nC @ 10V | 45ns | 40V | 5 ns | 60A | 2V | 20V | 40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 850μm | 4.75mm | 5.75mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
US6K2TR | ROHM Semiconductor | 数据表 | 949 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-SMD, Flat Leads | 6 | SILICON | 2 | 13 ns | 150°C TJ | Tape & Reel (TR) | 2007 | e2 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 380MOhm | Tin/Copper (Sn/Cu) | 30V | 1W | 260 | 1.4A | 10 | *K2 | 6 | Dual | 增强型MOSFET | 1W | 6 ns | 2 N-Channel (Dual) | SWITCHING | 240m Ω @ 1.4A, 10V | 2.5V @ 1mA | 70pF @ 10V | 2nC @ 5V | 6ns | 8 ns | 1.4A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
UT6MA3TCR | ROHM Semiconductor | 数据表 | 9000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 6-PowerUDFN | YES | SILICON | 5A 5.5A | 2 | -55°C~150°C TJ | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 6 | EAR99 | DUAL | 无铅 | 未说明 | not_compliant | 未说明 | S-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 2W | N and P-Channel | SWITCHING | 59m Ω @ 5A, 4.5V | 1.5V @ 1mA | 460pF @ 10V | 6.5nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 5.5A | 0.042Ohm | 12A | 20V | 2 mJ | METAL-OXIDE SEMICONDUCTOR | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
FDMS3615S | ON Semiconductor | 数据表 | 2661 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 90mg | SILICON | 16A 18A | 2 | 24 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 1W | R-PDSO-N6 | 增强型MOSFET | 1W | 排水源头 | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 5.8m Ω @ 16A, 10V | 2.5V @ 250μA | 1765pF @ 13V | 27nC @ 10V | 3ns | 2.2 ns | 18A | 20V | 16A | 25V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 115 pF | 1.05mm | 5.1mm | 6.1mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||
FDMB3900AN | ON Semiconductor | 数据表 | 30 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 23 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 60μg | SILICON | 2 | 15 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | ULTRA-LOW RESISTANCE | 800mW | R-PDSO-N6 | Dual | 增强型MOSFET | 1.6W | DRAIN | 6 ns | 2 N-Channel (Dual) | SWITCHING | 23m Ω @ 7A, 10V | 3V @ 250μA | 890pF @ 13V | 17nC @ 10V | 3ns | 25V | 3 ns | 7A | 20V | 7A | 25V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 750μm | 3mm | 1.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||
![]() | IRL6297SDTRPBF | Infineon Technologies | 数据表 | 20 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | DirectFET™ Isometric SA | 8 | 2 | -40°C~150°C TJ | Tape & Reel (TR) | 2013 | HEXFET® | 活跃 | 1 (Unlimited) | EAR99 | 1.7W | 增强型MOSFET | 1.7W | 2 N-Channel (Dual) | 4.9m Ω @ 15A, 4.5V | 1.1V @ 35μA | 2245pF @ 10V | 54nC @ 10V | 20V | 15A | 800mV | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS6894A | ON Semiconductor | 数据表 | 356 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | 2 | 33 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | Obsolete | 1 (Unlimited) | 20V | 900mW | 8A | Dual | 2W | 2 N-Channel (Dual) | 17m Ω @ 8A, 4.5V | 1.5V @ 250μA | 1676pF @ 10V | 24nC @ 4.5V | 14ns | 12 ns | 8A | 8V | 20V | 逻辑电平门 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD75207W15 | Texas Instruments | 数据表 | 8565 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 5 days ago) | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 9-UFBGA, DSBGA | 9 | 32.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e1 | yes | 活跃 | 1 (Unlimited) | Tin/Silver/Copper (Sn/Ag/Cu) | 700mW | BOTTOM | BALL | CSD75207 | -0.8 | 12.8 ns | 2 P-Channel (Dual) Common Source | 162m Ω @ 1A, 1.8V | 1.1V @ 250μA | 595pF @ 10V | 3.7nC @ 4.5V | 8.6ns | 16 ns | 3.9A | -6V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 625μm | 1.75mm | 1.75mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
FDMD8280 | ON Semiconductor | 数据表 | 15000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 12-PowerWDFN | 12 | 82.3188mg | SILICON | 2 | 26 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 12 | EAR99 | Tin (Sn) | 1W | 无铅 | 260 | not_compliant | 未说明 | 2 | Dual | 增强型MOSFET | 排水源头 | 15 ns | 2 N-Channel (Dual) | SWITCHING | 8.2m Ω @ 11A, 10V | 4V @ 250μA | 3050pF @ 40V | 44nC @ 10V | 12ns | 80V | 8.9 ns | 11A | 20V | 80V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
AO4803A | Alpha & Omega Semiconductor Inc. | 数据表 | 14 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | 不用于新设计 | 1 (Unlimited) | 2W | 2W | 2 P-Channel (Dual) | 46m Ω @ 5A, 10V | 2.5V @ 250μA | 520pF @ 15V | 11nC @ 10V | 30V | 5A | 20V | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | STS7C4F30L | STMicroelectronics | 数据表 | 4840 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 7A 4A | 2 | 150°C TJ | Tape & Reel (TR) | STripFET™ | e4 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 镍钯金 | 2W | DUAL | 鸥翼 | 260 | 7A | 30 | STS7C4 | 8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel | SWITCHING | 22m Ω @ 3.5A, 10V | 2.5V @ 250μA | 1050pF @ 25V | 23nC @ 5V | 35ns | 30V | N-CHANNEL AND P-CHANNEL | 4A | 7A | 0.026Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||
FDZ1323NZ | ON Semiconductor | 数据表 | 120000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 6-XFBGA, WLCSP | 6 | 50mg | SILICON | 2 | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | PowerTrench® | e1 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 2W | BOTTOM | BALL | Single | 增强型MOSFET | 2W | 12 ns | 500mW | 2 N-Channel (Dual) Common Drain | SWITCHING | 13m Ω @ 1A, 4.5V | 1.2V @ 250μA | 2055pF @ 10V | 24nC @ 10V | 13ns | 20V | 13 ns | 10A | 12V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 380 pF | 150μm | 2.3mm | 1.3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||
![]() | 2N7002BKV,115 | Nexperia USA Inc. | 数据表 | 4000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 4 Weeks | Tin | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 2 | 12 ns | 150°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | 1.6Ohm | 逻辑电平兼容 | 350mW | FLAT | 260 | 40 | 6 | Dual | 增强型MOSFET | 525mW | 5 ns | 350mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 500mA, 10V | 2.1V @ 250μA | 50pF @ 10V | 0.6nC @ 4.5V | 6ns | 7 ns | 340mA | 20V | 60V | 0.34A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
![]() | DMP3036SSD-13 | Diodes Incorporated | 数据表 | 35042 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1.2W | 鸥翼 | 未说明 | 未说明 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.2W | 2 P-Channel (Dual) | SWITCHING | 20m Ω @ 9A, 10V | 3V @ 250μA | 1931pF @ 15V | 16.5nC @ 10V | 30V | 10.6A | 0.02Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
NDC7003P | ON Semiconductor | 数据表 | 330 In Stock | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 340mA | 2 | 8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 5Ohm | -50V | 960mW | 鸥翼 | -220mA | 2 | Dual | 增强型MOSFET | 960mW | 3.2 ns | 700mW | 2 P-Channel (Dual) | SWITCHING | 5 Ω @ 340mA, 10V | 3.5V @ 250μA | 66pF @ 25V | 2.2nC @ 10V | 10ns | 10 ns | -340mA | -1V | 20V | 0.34A | -60V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | -1.9 V | 60V | 1.1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||
![]() | IRF7341GTRPBF | Infineon Technologies | 数据表 | 300 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2005 | HEXFET® | 活跃 | 1 (Unlimited) | 8 | EAR99 | 超低电阻 | 2.4W | 鸥翼 | 未说明 | 未说明 | R-PDSO-G8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2.4W | 2 N-Channel (Dual) | SWITCHING | 50m Ω @ 5.1A, 10V | 1V @ 250μA (Min) | 780pF @ 25V | 44nC @ 10V | 55V | 5.1A | MS-012AA | 0.05Ohm | 42A | 55V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
EM6K31T2R | ROHM Semiconductor | 数据表 | 24000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | SILICON | 2 | 18 ns | 150°C TJ | Tape & Reel (TR) | 2010 | e2 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin/Copper (Sn/Cu) | 120mW | FLAT | 260 | 10 | *K31 | 6 | 2 | 增强型MOSFET | 3.5 ns | 150mW | 2 N-Channel (Dual) | SWITCHING | 2.4 Ω @ 250mA, 10V | 2.3V @ 1mA | 15pF @ 25V | 5ns | 60V | 28 ns | 250mA | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
FDS6984AS | ON Semiconductor | 数据表 | 14562 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | 5.5A 8.5A | 2 | 22 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | PowerTrench®, SyncFET™ | 活跃 | 1 (Unlimited) | 32MOhm | 2W | 2W | 900mW | 2 N-Channel (Dual) | 31m Ω @ 5.5A, 10V | 3V @ 250μA | 420pF @ 15V | 11nC @ 10V | 6ns | 2 ns | 8.5A | 1.7V | 20V | 30V | 逻辑电平门 | 1.5mm | 5mm | 3.99mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | STL36DN6F7 | STMicroelectronics | 数据表 | 22721 In Stock | - | 最小起订量: 1 最小包装量: 1 | 38 Weeks | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 8-PowerVDFN | YES | SILICON | PowerFLATTM_8256945_DI_typeC | 33A Tc | 2 | 12.1 ns | -55°C~175°C TJ | Tape & Reel (TR) | STripFET™ | e3 | 活跃 | 1 (Unlimited) | 6 | Matte Tin (Sn) | 260 | not_compliant | 未说明 | STL36 | R-PDSO-F6 | 2 | 增强型MOSFET | 58W | DRAIN | 7.85 ns | 2 N-Channel (Dual) | SWITCHING | 27m Ω @ 4.5A, 10V | 4V @ 250μA | 420pF @ 30V | 8nC @ 10V | 33A | 20V | 36A | 60V | 144A | METAL-OXIDE SEMICONDUCTOR | 175°C | Standard | 1mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
![]() | DMN2019UTS-13 | Diodes Incorporated | 数据表 | 30000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 157.991892mg | 562 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | e3 | 活跃 | 1 (Unlimited) | EAR99 | 18.5mOhm | Matte Tin (Sn) | 780mW | DMN2019 | 2 | Dual | 53 ns | 2 N-Channel (Dual) Common Drain | 18.5m Ω @ 7A, 10V | 950mV @ 250μA | 143pF @ 10V | 8.8nC @ 4.5V | 78ns | 20V | 234 ns | 5.4A | 12V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | NX3008PBKS,115 | Nexperia USA Inc. | 数据表 | 3000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | Tin | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 2 | 65 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 445mW | 6 | Dual | 445mW | 19 ns | 2 P-Channel (Dual) | 4.1 Ω @ 200mA, 4.5V | 1.1V @ 250μA | 46pF @ 15V | 0.75nC @ 4.5V | 30ns | 30V | 38 ns | 200mA | 8V | -30V | -30V | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMD63C03XTA | Diodes Incorporated | 数据表 | 42 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | 139.989945mg | SILICON | 13.1 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 185mOhm | Matte Tin (Sn) | 低阈值 | 1.04W | DUAL | 鸥翼 | 260 | 40 | 8 | 增强型MOSFET | 1.25W | 2.6 ns | N and P-Channel | SWITCHING | 135m Ω @ 1.7A, 10V | 1V @ 250μA (Min) | 290pF @ 25V | 8nC @ 10V | 4.8ns | N-CHANNEL AND P-CHANNEL | 4.8 ns | -2A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 950μm | 3.1mm | 3.1mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
![]() | ZXMN6A09DN8TA | Diodes Incorporated | 数据表 | 500 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 4.3A | 2 | 25.3 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 40mOhm | Matte Tin (Sn) | 60V | 2.1W | 鸥翼 | 260 | 4.4A | 40 | 8 | 2 | 增强型MOSFET | 2.1W | 4.9 ns | 1.25W | 2 N-Channel (Dual) | SWITCHING | 40m Ω @ 8.2A, 10V | 3V @ 250μA | 1407pF @ 40V | 24.2nC @ 5V | 5ns | 4.6 ns | 5.6A | 20V | 4.3A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||
![]() | FDY2000PZ | ON Semiconductor | 数据表 | 4050 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 22 hours ago) | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 32mg | SILICON | 2 | 8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 625mW | FLAT | Dual | 增强型MOSFET | 630mW | 6 ns | 446mW | 2 P-Channel (Dual) | 1.2 Ω @ 350mA, 4.5V | 1.5V @ 250μA | 100pF @ 10V | 1.4nC @ 4.5V | 13ns | 20V | 13 ns | 350mA | -1.03V | 8V | 0.35A | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 600μm | 1.7mm | 1.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
![]() | ZXMN3A04DN8TA | Diodes Incorporated | 数据表 | 10200 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 19 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | 6.5A | 38.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 20mOhm | Matte Tin (Sn) | 30V | 2.15W | 鸥翼 | 260 | 6.8A | 40 | 8 | 2 | 2.15W | 5.2 ns | 1.81W | 2 N-Channel (Dual) | 20m Ω @ 12.6A, 10V | 1V @ 250μA (Min) | 1890pF @ 15V | 36.8nC @ 10V | 6.1ns | 20.2 ns | 8.5A | 12V | 30V | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |
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